Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1898-1904
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Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Deng Shengling , Huang Yongzhen , Jin Chaoyuan and and Yu Lijuan

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Key words: quantum dot lasers, multiple energy levels, gain spectrum, temperature dependence

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1898-1904
      Deng Shengling, Huang Yongzhen, Jin Chaoyuan, and Yu Lijuan. Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers[J]. 半导体学报(英文版), 2005, 26(10): 1898-1904.
      Citation:
      Deng Shengling, Huang Yongzhen, Jin Chaoyuan, and Yu Lijuan. Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers[J]. 半导体学报(英文版), 2005, 26(10): 1898-1904.
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      • Received Date: 2015-08-19

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