Chin. J. Semicond. > 1999, Volume 20 > Issue 7 > 534-538
|

CONTENTS

掺硅氮化镓材料的MOVPE生长及其性质研究

刘祥林 , 汪连山 , 陆大成 , 汪度 , 王晓晖 and 林兰英

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2728 Times PDF downloads: 1383 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 1999

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1999  >  20(7): 534-538
      刘祥林, 汪连山, 陆大成, 汪度, 王晓晖, 林兰英. 掺硅氮化镓材料的MOVPE生长及其性质研究[J]. 半导体学报(英文版), 1999, 20(7): 534-538.
      Citation:
      刘祥林, 汪连山, 陆大成, 汪度, 王晓晖, 林兰英. 掺硅氮化镓材料的MOVPE生长及其性质研究[J]. 半导体学报(英文版), 1999, 20(7): 534-538.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return