Abstract:

A l_xGa_{1- x}N and GaN/A l_xGa_{1- x}N quantum wells were successfully grown on basal plane sapphire substrates by gas source molecular beam epitaxy using ammonia as nitrogen source. Photoluminescence measurements were carried out for the samples grown. The results show that the blue shifts in optical transition energy due to quantum size effect are 57meV at room temperature and 49meV at 80K for the GaN/Al0_.12Ga_0.88N quantum well sample having 6 GaN wells each with width of 7nm.