Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 656-661

Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices

Wu Junfeng , Zhong Xinghua , Li Duoli , Kang Xiaohui , Shao Hongxu , Yang Jianjun , Hai Chaohe and and Han Zhengsheng

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Key words: partial-depleted SOI, body-tied, breakdown, silicide, H gate

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Received: 19 August 2015 Revised: Online: Published: 01 April 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(4): 656-661

Wu Junfeng, Zhong Xinghua, Li Duoli, Kang Xiaohui, Shao Hongxu, Yang Jianjun, Hai Chaohe, and Han Zhengsheng. Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices[J]. 半导体学报(英文版), 2005, 26(4): 656-661.

Citation:

Wu Junfeng, Zhong Xinghua, Li Duoli, Kang Xiaohui, Shao Hongxu, Yang Jianjun, Hai Chaohe, and Han Zhengsheng. Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices[J]. 半导体学报(英文版), 2005, 26(4): 656-661.

Wu Junfeng, Zhong Xinghua, Li Duoli, Kang Xiaohui, Shao Hongxu, Yang Jianjun, Hai Chaohe, and Han Zhengsheng. Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices[J]. 半导体学报(英文版), 2005, 26(4): 656-661.

Citation:

Wu Junfeng, Zhong Xinghua, Li Duoli, Kang Xiaohui, Shao Hongxu, Yang Jianjun, Hai Chaohe, and Han Zhengsheng. Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices[J]. 半导体学报(英文版), 2005, 26(4): 656-661.

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