| Citation: |
Lu Jingxue, Huang Fengyi, Wang Zhigong, Wu Wengang. Refinement of an Analytical Approximation of the Surface Potential in MOSFETs[J]. Journal of Semiconductors, 2006, 27(7): 1155-1158.
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Lu J X, Huang F Y, Wang Z G, Wu W G. Refinement of an Analytical Approximation of the Surface Potential in MOSFETs[J]. Chin. J. Semicond., 2006, 27(7): 1155.
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Refinement of an Analytical Approximation of the Surface Potential in MOSFETs
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Abstract
A refinement of an analytical approximation of the surface potential in MOSFETs is proposed by introducing a high-order term.As compared to the conventional treatment with accuracy between 1nV and 0.03mV in the cases with an oxide thickness tox=1～10nm and substrate doping concentration Na=1E15～1E18cm-3,this method yields an accuracy within about 1pV in all cases.This is comparable to numerical simulations,but does not require trading off much computation efficiency.More importantly,the spikes in the error curve associated with the traditional treatment are eliminated.-
Keywords:
- MOSFET,
- surface potential,
- analytical approximation,
- device modeling
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References
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Proportional views
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