Chin. J. Semicond. > 1988, Volume 9 > Issue 1 > 27-33
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硅中间隙式4d过渡金属杂质的电子结构

吴汲安 and 唐九耀

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(1): 27-33
      吴汲安, 唐九耀. 硅中间隙式4d过渡金属杂质的电子结构[J]. 半导体学报(英文版), 1988, 9(1): 27-33.
      Citation:
      吴汲安, 唐九耀. 硅中间隙式4d过渡金属杂质的电子结构[J]. 半导体学报(英文版), 1988, 9(1): 27-33.
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      • Received Date: 2015-08-19

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