Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer

Xiong Jijun; 范波; Fan Bo; Guo Hugang

J. Semicond. > 2008, Volume 29 > Issue 9 > 1715-1722

PAPERS

Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer

+ Author Affiliations

Abstract: A calculation and test method for the natural frequency of a high-g micro accelerometer with complex structures is presented.A universal formula for natural frequency,which can significantly simplify the structural design process,is deduced and confirmed by experiment.A simplified analytical model is established to describe the accelerometer’s mechanical behavior and deduce the formula for the natural frequency.Finite element modeling is also conducted to evaluate the natural frequency of the micro-accelerometer and verify the formula.The results obtained from the analytical model and the finite element simulation show good agreement.Finally,a shock comparison method designed for acquiring the high frequency characteristics of the accelerometer is introduced to verify the formula by testing its actual natural frequency.

Key words: natural frequency, micro accelerometer, Rayleigh-Ritz formula

1	Interfacial engineering of printable bottom back metal electrodes for full-solution processed flexible organic solar cells Hongyu Zhen, Kan Li, Yaokang Zhang, Lina Chen, Liyong Niu, et al. Journal of Semiconductors, 2018, 39(1): 014002. doi: 10.1088/1674-4926/39/1/014002
2	Hybrid functional microfibers for textile electronics and biosensors Bichitra Nanda Sahoo, Byungwoo Choi, Jungmok Seo, Taeyoon Lee Journal of Semiconductors, 2018, 39(1): 011009. doi: 10.1088/1674-4926/39/1/011009
3	A simple chemical route to synthesize the umangite phase of copper selenide (Cu₃Se₂) thin film at room temperature Balasaheb M. Palve, Sandesh R. Jadkar, Habib M. Pathan Journal of Semiconductors, 2017, 38(6): 063003. doi: 10.1088/1674-4926/38/6/063003
4	Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014 Lara Valentic, Nima E. Gorji Journal of Semiconductors, 2015, 36(9): 094012. doi: 10.1088/1674-4926/36/9/094012
5	A novel dual-feed low-dropout regulator Zhikui Duan, Jianguo Hu, Yi Ding, Chong Lu, Yanyu Ding, et al. Journal of Semiconductors, 2015, 36(6): 065003. doi: 10.1088/1674-4926/36/6/065003
6	The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole J. V. Thombare, M. C. Rath, S. H. Han, V. J. Fulari Journal of Semiconductors, 2013, 34(9): 093001. doi: 10.1088/1674-4926/34/9/093001
7	AC-electronic and dielectric properties of semiconducting phthalocyanine compounds:a comparative study Safa'a M. Hraibat, Rushdi M-L. Kitaneh, Mohammad M. Abu-Samreh, Abdelkarim M. Saleh Journal of Semiconductors, 2013, 34(11): 112001. doi: 10.1088/1674-4926/34/11/112001
8	Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite by using electron beam irradiation Jiang Ran, Meng Lingguo, Zhang Xijian, Hyung-Suk Jung, Cheol Seong Hwang, et al. Journal of Semiconductors, 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004
9	Fabrication and characterization of a low frequency electromagnetic energy harvester Abu Riduan Md. Foisal, Gwiy-Sang Chung Journal of Semiconductors, 2012, 33(7): 074001. doi: 10.1088/1674-4926/33/7/074001
10	Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode Mutabar Shah, M. H. Sayyad, Kh. S. Karimov Journal of Semiconductors, 2011, 32(4): 044001. doi: 10.1088/1674-4926/32/4/044001
11	Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects Ken K. Chin Journal of Semiconductors, 2011, 32(11): 112001. doi: 10.1088/1674-4926/32/11/112001
12	Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching Ou Weiying, Zhao Lei, Diao Hongwei, Zhang Jun, Wang Wenjing, et al. Journal of Semiconductors, 2011, 32(5): 056002. doi: 10.1088/1674-4926/32/5/056002
13	Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale An Wei, Zhao Yongwu, Wang Yongguang Journal of Semiconductors, 2010, 31(11): 116005. doi: 10.1088/1674-4926/31/11/116005
14	Design and noise analysis of a sigma–delta capacitive micromachined accelerometer Liu Yuntao, Liu Xiaowei, Chen Weiping, Wu Qun Journal of Semiconductors, 2010, 31(5): 055006. doi: 10.1088/1674-4926/31/5/055006
15	A 540-W digital pre-amplifier with 88-dB dynamic range for electret microphones Liu Yan, Hua Siliang, Wang Donghui, Hou Chaohuan Journal of Semiconductors, 2009, 30(5): 055004. doi: 10.1088/1674-4926/30/5/055004
16	An Optoelectronic Pulse Frequency Modulation Circuitfor Retinal Prosthesis Liu Jinbin, Chen Hongda, Gao Peng, Pei Weihua, Sui Xiaohong, et al. Chinese Journal of Semiconductors , 2006, 27(4): 700-704.
17	Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, et al. Chinese Journal of Semiconductors , 2006, 27(2): 235-238.
18	Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia Chinese Journal of Semiconductors , 2006, 27(2): 229-234.
19	Fabrication and Numerical Simulation of a Micromachined Contact Cantilever RF-MEMS Switch Sun Jianhai, Cui Dafu, Xiao Jiang Chinese Journal of Semiconductors , 2006, 27(2): 309-312.
20	Bulk-Silicon Resonant Accelerometer Jia Yubin, Hao Yilong，and Zhang Rong Chinese Journal of Semiconductors , 2005, 26(2): 281-286.

Search

GET CITATION

Xiong Jijun, 范波, Fan Bo, Guo Hugang. Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer[J]. Journal of Semiconductors, 2008, 29(9): 1715-1722.

Xiong J J, Fan B, Guo H G. Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer[J]. J. Semicond., 2008, 29(9): 1715.

Export: BibTex EndNote

Article Metrics

Article views: 3578 Times PDF downloads: 976 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 21 April 2008 Online: Published: 01 September 2008

A calculation and test method for the natural frequency of a high-g micro accelerometer with complex structures is presented.A universal formula for natural frequency,which can significantly simplify the structural design process,is deduced and confirmed by experiment.A simplified analytical model is established to describe the accelerometer’s mechanical behavior and deduce the formula for the natural frequency.Finite element modeling is also conducted to evaluate the natural frequency of the micro-accelerometer and verify the formula.The results obtained from the analytical model and the finite element simulation show good agreement.Finally,a shock comparison method designed for acquiring the high frequency characteristics of the accelerometer is introduced to verify the formula by testing its actual natural frequency.

Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer

Abstract

References

Proportional views

Catalog

Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Calculation,Simulation,and Testing for the Natural Frequency of a Micro Accelerometer

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content