J. Semicond. > 2008, Volume 29 > Issue 2 > 324-328
|

PAPERS

Resonant Tunneling Diode Based Stress Measurement

Xiong Jijun, Mao Haiyang, Zhang Wendong and Xue Chenyang

+ Author Affiliations

PDF

Abstract: The output characteristics of InGaAs/AlAs resonant tunneling diodes (RTDs) changes as a function of external stress, and this meso-piezoresistive effect can be used to measure stress.In this paper, two RTD-based strategies to measure stress, resonance frequency measurement and RTD-Wheatstone bridge measurement, are discussed.The experimental results show that the piezoresistive sensitivity of the RTD-Wheatstone bridge can be configured within a range of 3 orders with different bias voltages, and the maximum piezoresistive sensitivity is 4.782e-9Pa-1.

Key words: current-voltage characteristic, oscillation frequency, piezoresistive sensitivity, resonant tunneling diode, stress measurement

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3240 Times PDF downloads: 2975 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 16 October 2007 Online: Published: 01 February 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2008  >  29(2): 324-328
      Xiong Jijun, Mao Haiyang, Zhang Wendong, Xue Chenyang. Resonant Tunneling Diode Based Stress Measurement[J]. Journal of Semiconductors, 2008, 29(2): 324-328. ****Xiong J J, Mao H Y, Zhang W D, Xue C Y. Resonant Tunneling Diode Based Stress Measurement[J]. J. Semicond., 2008, 29(2): 324.
      Citation:
      Xiong Jijun, Mao Haiyang, Zhang Wendong, Xue Chenyang. Resonant Tunneling Diode Based Stress Measurement[J]. Journal of Semiconductors, 2008, 29(2): 324-328. ****
      Xiong J J, Mao H Y, Zhang W D, Xue C Y. Resonant Tunneling Diode Based Stress Measurement[J]. J. Semicond., 2008, 29(2): 324.
      shu

      Resonant Tunneling Diode Based Stress Measurement

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Institute of Microelectronics, Pe

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-08
      • Revised Date: 2007-10-16
      • Published Date: 2008-01-31

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return