Chin. J. Semicond. > 1993, Volume 14 > Issue 4 > 242-246
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APCVD制备非晶硅的关键工艺参数分析

王敬义 , 何笑明 , 王宇 , 陈巍 , 尹盛 , 赵宁 and 孙雪莉

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    王守国, 张义门, 张玉明. 离子注入4H-SiC MESFET器件的夹断电压(英文)[J]. 半导体学报(英文版), 2003, 24(7): 697-701.
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    Received: 20 August 2015 Revised: Online: Published: 01 April 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(4): 242-246
      王敬义, 何笑明, 王宇, 陈巍, 尹盛, 赵宁, 孙雪莉. APCVD制备非晶硅的关键工艺参数分析[J]. 半导体学报(英文版), 1993, 14(4): 242-246.
      Citation:
      王敬义, 何笑明, 王宇, 陈巍, 尹盛, 赵宁, 孙雪莉. APCVD制备非晶硅的关键工艺参数分析[J]. 半导体学报(英文版), 1993, 14(4): 242-246.
      shu

      • Received Date: 2015-08-20

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