| Citation: |
Cheng Jianbing, Zhang Bo, Li Zhaoji. Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer[J]. Journal of Semiconductors, 2008, 29(2): 344-347.
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Cheng J B, Zhang B, Li Z J. Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer[J]. J. Semicond., 2008, 29(2): 344.
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Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer
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Abstract
A new LDMOS with a full depletion floating buried layer is proposed.Because of the buried layer, a new electric field peak is induced and this new field modulates the field in the drift region.The modulation reduces the field of the drain side, and meanwhile, the fields of the source side and the middle of the drift are improved (the REBULF effect).The influence of the doping, thickness, and length of bury on the breakdown voltage is discussed.2D numerical simulations using MEDICI show that the breakdown voltage increases from 585.8 to 886.9V.-
Keywords:
- LDMOS,
- full depletion floating buried layer,
- RESURF,
- REBULF,
- breakdown voltage
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References
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Proportional views
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