Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 264-268
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Si(111)衬底上IBE法外延生长β-FeSi_2薄膜的研究

李慧 , 马辉 , 丁维清 and 秦复光

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 264-268
      李慧, 马辉, 丁维清, 秦复光. Si(111)衬底上IBE法外延生长β-FeSi_2薄膜的研究[J]. 半导体学报(英文版), 1997, 18(4): 264-268.
      Citation:
      李慧, 马辉, 丁维清, 秦复光. Si(111)衬底上IBE法外延生长β-FeSi_2薄膜的研究[J]. 半导体学报(英文版), 1997, 18(4): 264-268.
      shu

      • Received Date: 2015-08-19

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