Chin. J. Semicond. > 1998, Volume 19 > Issue 5 > 394-396
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超高真空化学气相淀积法生长的n-Si/i-p~+-i SiGe/n-Si结构的透射电镜和二次离子质谱分析

张进书 , 金晓军 , 钱佩信 and 罗台秦

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    Received: 18 August 2015 Revised: Online: Published: 01 May 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(5): 394-396
      张进书, 金晓军, 钱佩信, 罗台秦. 超高真空化学气相淀积法生长的n-Si/i-p~+-i SiGe/n-Si结构的透射电镜和二次离子质谱分析[J]. 半导体学报(英文版), 1998, 19(5): 394-396.
      Citation:
      张进书, 金晓军, 钱佩信, 罗台秦. 超高真空化学气相淀积法生长的n-Si/i-p~+-i SiGe/n-Si结构的透射电镜和二次离子质谱分析[J]. 半导体学报(英文版), 1998, 19(5): 394-396.
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      • Received Date: 2015-08-18

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