| Citation: |
Chen Jun, Wang Jianfeng, Wang Hui, Zhao Degang, Zhu Jianjun, Zhang Shuming, Yang Hui. Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth[J]. Journal of Semiconductors, 2006, 27(3): 419-424.
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Chen J, Wang J F, Wang H, Zhao D G, Zhu J J, Zhang S M, Yang H. Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth[J]. Chin. J. Semicond., 2006, 27(3): 419.
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Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth
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Abstract
High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth.AFM,wet chemical etching,and TEM experiments show that with a two-step ELOG procedure,the propagation of defects under the mask is blocked,and the coherently grown GaN above the window also experiences a drastic reduction in defect density.In addition,a grain boundary is formed at the coalescence boundary of neighboring growth fronts.The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance. -
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