Chin. J. Semicond. > 1996, Volume 17 > Issue 1 > 1-5

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在Ge和SiGe复合缓冲层上生长高质量Ge／Si超晶格

盛篪，周铁城，龚大卫，樊永良，王建宝，张翔九，王迅

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(1): 1-5
      盛篪，周铁城，龚大卫，樊永良，王建宝，张翔九，王迅. 在Ge和SiGe复合缓冲层上生长高质量Ge／Si超晶格[J]. 半导体学报(英文版), 1996, 17(1): 1-5.
      Citation:
      盛篪，周铁城，龚大卫，樊永良，王建宝，张翔九，王迅. 在Ge和SiGe复合缓冲层上生长高质量Ge／Si超晶格[J]. 半导体学报(英文版), 1996, 17(1): 1-5.
      shu

      • Received Date: 2015-08-18

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