Chin. J. Semicond. > 1987, Volume 8 > Issue 4 > 410-417
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流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究

刘冉 and 沈学础

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(4): 410-417
      刘冉, 沈学础. 流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究[J]. 半导体学报(英文版), 1987, 8(4): 410-417.
      Citation:
      刘冉, 沈学础. 流体静压力下窄禁带Hg_(1-x)Cd_xTe电学性质的研究[J]. 半导体学报(英文版), 1987, 8(4): 410-417.
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      • Received Date: 2015-08-19

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