Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 823-826
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金刚石-铜复合薄膜热沉基底

董占民 , КопанъB C and 谢志刚

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 823-826
      董占民, КопанъB C, 谢志刚. 金刚石-铜复合薄膜热沉基底[J]. 半导体学报(英文版), 1999, 20(9): 823-826.
      Citation:
      董占民, КопанъB C, 谢志刚. 金刚石-铜复合薄膜热沉基底[J]. 半导体学报(英文版), 1999, 20(9): 823-826.
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      • Received Date: 2015-08-19

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