Chin. J. Semicond. > 1993, Volume 14 > Issue 7 > 402-409
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碳掺杂In_xGa_(1-x)As的MOMBE生长与特性

齐鸣 , 罗晋生 , 白坚淳一 , 山田巧 , 野崎真次 , 高桥清 , 德光永辅 and 小长井诚

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    Received: 20 August 2015 Revised: Online: Published: 01 July 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(7): 402-409
      齐鸣, 罗晋生, 白坚淳一, 山田巧, 野崎真次, 高桥清, 德光永辅, 小长井诚. 碳掺杂In_xGa_(1-x)As的MOMBE生长与特性[J]. 半导体学报(英文版), 1993, 14(7): 402-409.
      Citation:
      齐鸣, 罗晋生, 白坚淳一, 山田巧, 野崎真次, 高桥清, 德光永辅, 小长井诚. 碳掺杂In_xGa_(1-x)As的MOMBE生长与特性[J]. 半导体学报(英文版), 1993, 14(7): 402-409.
      shu

      • Received Date: 2015-08-20

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