| Citation: |
Long Fei, Du Jiangfeng, Luo Qian, Zhou Wei, Xia Jianxin, Yang Mohua. A Research on Current Collapse of GaN HEMTs Under DC High Voltage[J]. Journal of Semiconductors, 2006, 27(S1): 227-230.
****
Long F, Du J F, Luo Q, Zhou W, Xia J X, Yang M H. A Research on Current Collapse of GaN HEMTs Under DC High Voltage[J]. Chin. J. Semicond., 2006, 27(13): 227.
|
A Research on Current Collapse of GaN HEMTs Under DC High Voltage
-
Abstract
Based on GaN HEMTs’ device physics and experiment testing results,a new physical model of current collapse is presented.Research results show that under high drain voltage the channel electrons easily eject into GaN buffer layer and are trapped,depleting 2DEG and inducing current collapse.This model describes relationship between current collapse and traps in buffer layer,obtaining product 0.95×θ｜VGS｜ of electron mobility and 2DEG density before and after current collapse.This conclusion can be assisted in AlGaN/GaN HEMT devices’ further theory research and investigation.-
Keywords:
- current collapse,
- GaN HEMT,
- trap,
- physical model
-
References
-
Proportional views
DownLoad: