Chin. J. Semicond. > 1991, Volume 12 > Issue 10 > 588-595
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MBE GaAs/Si材料应力性质的研究

胡福义 , 李爱珍 and 王建新

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(10): 588-595
      胡福义, 李爱珍, 王建新. MBE GaAs/Si材料应力性质的研究[J]. 半导体学报(英文版), 1991, 12(10): 588-595.
      Citation:
      胡福义, 李爱珍, 王建新. MBE GaAs/Si材料应力性质的研究[J]. 半导体学报(英文版), 1991, 12(10): 588-595.
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      • Received Date: 2015-08-19

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