Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1401-1405
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氮杂质对直拉单晶硅中位错的作用

李东升 , 杨德仁 , 朱爱平 , 黄笑容 , 王淦 , 张锦心 , 李立本 and 阙端麟

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Key words: 硅单晶, 位错, 氮

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1401-1405
      李东升, 杨德仁, 朱爱平, 黄笑容, 王淦, 张锦心, 李立本, 阙端麟. 氮杂质对直拉单晶硅中位错的作用[J]. 半导体学报(英文版), 2001, 22(11): 1401-1405.
      Citation:
      李东升, 杨德仁, 朱爱平, 黄笑容, 王淦, 张锦心, 李立本, 阙端麟. 氮杂质对直拉单晶硅中位错的作用[J]. 半导体学报(英文版), 2001, 22(11): 1401-1405.
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      • Received Date: 2015-08-20

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