Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 486-491
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离子注入高温退火对4H-SiC MESFET特性的影响(英文)

杨林安 , 张义门 , 于春利 , 张玉明 , 陈刚 and 黄念宁

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Key words: 碳化硅, 退火, 表面分析, 欧姆接触, I-V特性

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 486-491
      杨林安, 张义门, 于春利, 张玉明, 陈刚, 黄念宁. 离子注入高温退火对4H-SiC MESFET特性的影响(英文)[J]. 半导体学报(英文版), 2004, 25(5): 486-491.
      Citation:
      杨林安, 张义门, 于春利, 张玉明, 陈刚, 黄念宁. 离子注入高温退火对4H-SiC MESFET特性的影响(英文)[J]. 半导体学报(英文版), 2004, 25(5): 486-491.
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      • Received Date: 2015-08-19

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