Chin. J. Semicond. > 1999, Volume 20 > Issue 5 > 429-432
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混晶GaAs_(1-x)P_x∶N(x=0.4)中的N_X和N_Γ发光带的研究

俞容文 , 郑健生 and 颜炳章

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(5): 429-432
      俞容文, 郑健生, 颜炳章. 混晶GaAs_(1-x)P_x∶N(x=0.4)中的N_X和N_Γ发光带的研究[J]. 半导体学报(英文版), 1999, 20(5): 429-432.
      Citation:
      俞容文, 郑健生, 颜炳章. 混晶GaAs_(1-x)P_x∶N(x=0.4)中的N_X和N_Γ发光带的研究[J]. 半导体学报(英文版), 1999, 20(5): 429-432.
      shu

      • Received Date: 2015-08-20

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