Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 957-961

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正向栅控二极管监测F- N电应力诱生的SOI- MOSFET界面陷阱(英文)

何进黄 , 爱华 , 张兴 and 黄如

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Key words: F-N应力效应, 界面陷阱, R-G电流, 栅控二极管, MOSFET/SOI

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 957-961
      何进黄, 爱华, 张兴, 黄如. 正向栅控二极管监测F- N电应力诱生的SOI- MOSFET界面陷阱(英文)[J]. 半导体学报(英文版), 2001, 22(8): 957-961.
      Citation:
      何进黄, 爱华, 张兴, 黄如. 正向栅控二极管监测F- N电应力诱生的SOI- MOSFET界面陷阱(英文)[J]. 半导体学报(英文版), 2001, 22(8): 957-961.
      shu

      • Received Date: 2015-08-20

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