Chin. J. Semicond. > 1987, Volume 8 > Issue 4 > 395-401
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二元化合物总原子溅射率和刻蚀速率的经验公式

陈国樑

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(4): 395-401
      陈国樑. 二元化合物总原子溅射率和刻蚀速率的经验公式[J]. 半导体学报(英文版), 1987, 8(4): 395-401.
      Citation:
      陈国樑. 二元化合物总原子溅射率和刻蚀速率的经验公式[J]. 半导体学报(英文版), 1987, 8(4): 395-401.
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      • Received Date: 2015-08-19

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