Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 303-307
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Si衬底上外延3C-SiC薄层的XPS分析

雷天民 , 陈治明 , 余明斌 , 马剑平 , 胡宝宏 and 王建农

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Key words: XPS, 3C-SiC, 外延

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 303-307
      雷天民, 陈治明, 余明斌, 马剑平, 胡宝宏, 王建农. Si衬底上外延3C-SiC薄层的XPS分析[J]. 半导体学报(英文版), 2000, 21(3): 303-307.
      Citation:
      雷天民, 陈治明, 余明斌, 马剑平, 胡宝宏, 王建农. Si衬底上外延3C-SiC薄层的XPS分析[J]. 半导体学报(英文版), 2000, 21(3): 303-307.
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      • Received Date: 2015-08-20

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