Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 597-600
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T形结构在位测量薄膜中残余张应力的理论研究

徐方迁 , 徐联 and 何世堂

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Key words: 应力, 膜, 变形

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 597-600
      徐方迁, 徐联, 何世堂. T形结构在位测量薄膜中残余张应力的理论研究[J]. 半导体学报(英文版), 2004, 25(5): 597-600.
      Citation:
      徐方迁, 徐联, 何世堂. T形结构在位测量薄膜中残余张应力的理论研究[J]. 半导体学报(英文版), 2004, 25(5): 597-600.
      shu

      • Received Date: 2015-08-19

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