Chin. J. Semicond. > 1990, Volume 11 > Issue 8 > 590-593
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快速1.3μm InGaAsP/InP台面边发光二极管

赵蔚 , 张玉书 , 石家纬 , 金恩顺 and 高鼎三

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(8): 590-593
      赵蔚, 张玉书, 石家纬, 金恩顺, 高鼎三. 快速1.3μm InGaAsP/InP台面边发光二极管[J]. 半导体学报(英文版), 1990, 11(8): 590-593.
      Citation:
      赵蔚, 张玉书, 石家纬, 金恩顺, 高鼎三. 快速1.3μm InGaAsP/InP台面边发光二极管[J]. 半导体学报(英文版), 1990, 11(8): 590-593.
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      • Received Date: 2015-08-19

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