Chin. J. Semicond. > 1983, Volume 4 > Issue 2 > 142-148
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硅P-N结电场对金施主中心空穴热发射率的影响

陈开茅 and 毛晋昌

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(2): 142-148
      陈开茅, 毛晋昌. 硅P-N结电场对金施主中心空穴热发射率的影响[J]. 半导体学报(英文版), 1983, 4(2): 142-148.
      Citation:
      陈开茅, 毛晋昌. 硅P-N结电场对金施主中心空穴热发射率的影响[J]. 半导体学报(英文版), 1983, 4(2): 142-148.
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      • Received Date: 2015-08-20

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