| Citation: |
Hu Liangjun, Chen Yonghai, Ye Xiaoling, Wang Zhanguo. Magnetic and Optical Properties of InAs/GaAs Quantum Dots Doped by High Energy Mn Implantation[J]. Journal of Semiconductors, 2007, 28(S1): 84-87.
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Hu L J, Chen Y H, Ye X L, Wang Z G. Magnetic and Optical Properties of InAs/GaAs Quantum Dots Doped by High Energy Mn Implantation[J]. Chin. J. Semicond., 2007, 28(S1): 84.
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Magnetic and Optical Properties of InAs/GaAs Quantum Dots Doped by High Energy Mn Implantation
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Abstract
InAs/GaAs quantum dots (QDs) samples have been doped by Mn-implantation and revealed optical and magnetic properties after rapid annealing processes.The PL peaks of the QDs of the implanted samples blueshift for the inter-diffusion during annealing and the blueshifts of the heavy implanted samples are suppressed.We consider the reason that Mn ions and defect move to InAs ODs would relax the strain around the QDs，in the mean time，the clusters formed by Mn ions and defects impede the inter·diffusion of Ga and As.The cap layer formed GaMnAs and small MnAs granule，which presented magnetic properties at lOW temperature.-
Keywords:
- InAs/GaAS quantum dot,
- photolumineseence,
- MnAS cluster,
- ferromagnetism
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References
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Proportional views
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