Chin. J. Semicond. > 1993, Volume 14 > Issue 5 > 325-329

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a-Si:H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验

孙国胜 and 孔光临

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(5): 325-329
      孙国胜, 孔光临. a-Si:H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验[J]. 半导体学报(英文版), 1993, 14(5): 325-329.
      Citation:
      孙国胜, 孔光临. a-Si:H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验[J]. 半导体学报(英文版), 1993, 14(5): 325-329.
      shu

      • Received Date: 2015-08-20

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