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A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET

Zhang Xuefeng, Xu Jingping, Zou Xiao and Zhang Lanjun

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Abstract: A semi-experienced low-field hole mobility model of a strained Si1-xGex/Si pMOSFET is proposed by considering the effect of the strain on the energy-band structure of SiGe alloy.This model includes the variation of mobility with strain (Ge content) and the coulomb-scattering mechanism of interface-trapped charges on inversion carriers.Using the model,the change of the hole mobility with strain (Ge content) is simulated at room temperature,and the influence of some factors on mobility is discussed.

Key words: p-MOSFET, strained Si1-xGex, hole mobility

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    Zhang Xuefeng, Xu Jingping, Zou Xiao, Zhang Lanjun. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Journal of Semiconductors, 2006, 27(11): 2000-2004.
    Zhang X F, Xu J P, Zou X, Zhang L J. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Chin. J. Semicond., 2006, 27(11): 2000.
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    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(11): 2000-2004
      Zhang Xuefeng, Xu Jingping, Zou Xiao, Zhang Lanjun. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Journal of Semiconductors, 2006, 27(11): 2000-2004. ****Zhang X F, Xu J P, Zou X, Zhang L J. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Chin. J. Semicond., 2006, 27(11): 2000.
      Citation:
      Zhang Xuefeng, Xu Jingping, Zou Xiao, Zhang Lanjun. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Journal of Semiconductors, 2006, 27(11): 2000-2004. ****
      Zhang X F, Xu J P, Zou X, Zhang L J. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Chin. J. Semicond., 2006, 27(11): 2000.
      shu

      A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET

      • Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China

      • Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China

      • Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China

      • Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China

      • Received Date: 2015-08-18

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