Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes

Guo Xia; Dong Limin; Qu Hongwei; Da Xiaoli; Du Jinyu; Deng Jun; Shen Guangdi

Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 129-131

CONTENTS

Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes

Guo Xia, Dong Limin, Qu Hongwei, Da Xiaoli, Du Jinyu, Deng Jun and Shen Guangdi

School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China
School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China
School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China
School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China
School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China
School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China
School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

Abstract: 980nm vertical-cavity surface-emitting-diodes (VCSELs) are fabricated by employing metal organic chemical vapor deposition technique and AlAs/AlGaAs selective wet nitrogen oxidation technique which helps to realize the electrical and optical confinement in the VCSEL devices.The effects of oxidation aperture size on the performance of the VCSEL,such as threshold current and series resistance,are analyzed through fabricating VCSELs with different aperture size at the same time.The minimum threshold current is 0.8mA and the maximum optical output power achieved is about 8mW.

Key words: vertical-cavity surface-emitting-diode, intracavity contact, wet nitrogen oxidation

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Guo Xia, Dong Limin, Qu Hongwei, Da Xiaoli, Du Jinyu, Deng Jun, Shen Guangdi. Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes[J]. Journal of Semiconductors, 2005, 26(S1): 129-131.

Guo X, Dong L M, Qu H W, Da X L, Du J Y, Deng J, Shen G D. Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes[J]. Chin. J. Semicond., 2005, 26(13): 129.

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Received: 19 August 2015 Revised: Online: Published: 01 December 2005

980nm vertical-cavity surface-emitting-diodes (VCSELs) are fabricated by employing metal organic chemical vapor deposition technique and AlAs/AlGaAs selective wet nitrogen oxidation technique which helps to realize the electrical and optical confinement in the VCSEL devices.The effects of oxidation aperture size on the performance of the VCSEL,such as threshold current and series resistance,are analyzed through fabricating VCSELs with different aperture size at the same time.The minimum threshold current is 0.8mA and the maximum optical output power achieved is about 8mW.

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