Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 253-257
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MOCVD GaInP材料生长过程热力学及其特性

余庆选 , 励翠云 and 彭瑞伍

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 253-257
      余庆选, 励翠云, 彭瑞伍. MOCVD GaInP材料生长过程热力学及其特性[J]. 半导体学报(英文版), 1997, 18(4): 253-257.
      Citation:
      余庆选, 励翠云, 彭瑞伍. MOCVD GaInP材料生长过程热力学及其特性[J]. 半导体学报(英文版), 1997, 18(4): 253-257.
      shu

      • Received Date: 2015-08-19

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