Chin. J. Semicond. > 1999, Volume 20 > Issue 4 > 270-273
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MOCVD源物质Ti(OC_4H_9)_4的重复性研究

孙一军 , 夏冠群 , 张良莹 and 姚熹

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(4): 270-273
      孙一军, 夏冠群, 张良莹, 姚熹. MOCVD源物质Ti(OC_4H_9)_4的重复性研究[J]. 半导体学报(英文版), 1999, 20(4): 270-273.
      Citation:
      孙一军, 夏冠群, 张良莹, 姚熹. MOCVD源物质Ti(OC_4H_9)_4的重复性研究[J]. 半导体学报(英文版), 1999, 20(4): 270-273.
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      • Received Date: 2015-08-20

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