Chin. J. Semicond. > 2002, Volume 23 > Issue 5 > 555-560

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硅芯片封接用PbO、ZnO、B_2O_3三元系易熔玻璃特性与封接工艺的关系

孙以材 , 孟凡斌 , 潘国峰 , 刘盘阁 and 姬荣琴

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Key words: 低温玻璃, 芯片封接, 特性分析, DSC谱, 红外吸收谱, X射线衍射谱

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(5): 555-560
      孙以材, 孟凡斌, 潘国峰, 刘盘阁, 姬荣琴. 硅芯片封接用PbO、ZnO、B_2O_3三元系易熔玻璃特性与封接工艺的关系[J]. 半导体学报(英文版), 2002, 23(5): 555-560.
      Citation:
      孙以材, 孟凡斌, 潘国峰, 刘盘阁, 姬荣琴. 硅芯片封接用PbO、ZnO、B_2O_3三元系易熔玻璃特性与封接工艺的关系[J]. 半导体学报(英文版), 2002, 23(5): 555-560.
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      • Received Date: 2015-08-19

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