Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1197-1201
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一种新的梳状基区RF功率晶体管

周蓉 , 张庆中 and 胡思福

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Key words: 梳状基区, 散热, 雪崩击穿, 功率管

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1197-1201
      周蓉, 张庆中, 胡思福. 一种新的梳状基区RF功率晶体管[J]. 半导体学报(英文版), 2001, 22(9): 1197-1201.
      Citation:
      周蓉, 张庆中, 胡思福. 一种新的梳状基区RF功率晶体管[J]. 半导体学报(英文版), 2001, 22(9): 1197-1201.
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      • Received Date: 2015-08-20

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