Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 691-696
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中子辐照下的6H-SiCpn结电特性分析

尚也淳 , 张义门 and 张玉明

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Key words: pn结特性, 6H-SiC, 中子辐照

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 691-696
      尚也淳, 张义门, 张玉明. 中子辐照下的6H-SiCpn结电特性分析[J]. 半导体学报(英文版), 2000, 21(7): 691-696.
      Citation:
      尚也淳, 张义门, 张玉明. 中子辐照下的6H-SiCpn结电特性分析[J]. 半导体学报(英文版), 2000, 21(7): 691-696.
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      • Received Date: 2015-08-20

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