Chin. J. Semicond. > 1997, Volume 18 > Issue 9 > 714-717
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不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响

王志明 , 吕振东 , 封松林 , 赵谦 , 李树英 , 吉秀江 , 陈宗圭 , 徐仲英 and 郑厚植

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(9): 714-717
      王志明, 吕振东, 封松林, 赵谦, 李树英, 吉秀江, 陈宗圭, 徐仲英, 郑厚植. 不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响[J]. 半导体学报(英文版), 1997, 18(9): 714-717.
      Citation:
      王志明, 吕振东, 封松林, 赵谦, 李树英, 吉秀江, 陈宗圭, 徐仲英, 郑厚植. 不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响[J]. 半导体学报(英文版), 1997, 18(9): 714-717.
      shu

      • Received Date: 2015-08-19

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