Chin. J. Semicond. > 2000, Volume 21 > Issue 5 > 417-420

High Efficiency Al-Free 980 nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers

徐遵图 , 杨国文 , 张敬明 , 马骁宇 , 徐俊英 , 沈光地 and 陈良惠

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Key words: InGaAs/InGaAsP/InGaP

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Received: 20 August 2015 Revised: Online: Published: 01 May 2000

Article Navigation > Journal of Semiconductors > 2000 > 21(5): 417-420

徐遵图, 杨国文, 张敬明, 马骁宇, 徐俊英, 沈光地, 陈良惠. High Efficiency Al-Free 980 nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers[J]. 半导体学报(英文版), 2000, 21(5): 417-420.

Citation:

徐遵图, 杨国文, 张敬明, 马骁宇, 徐俊英, 沈光地, 陈良惠. High Efficiency Al-Free 980 nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers[J]. 半导体学报(英文版), 2000, 21(5): 417-420.

徐遵图, 杨国文, 张敬明, 马骁宇, 徐俊英, 沈光地, 陈良惠. High Efficiency Al-Free 980 nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers[J]. 半导体学报(英文版), 2000, 21(5): 417-420.

Citation:

徐遵图, 杨国文, 张敬明, 马骁宇, 徐俊英, 沈光地, 陈良惠. High Efficiency Al-Free 980 nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers[J]. 半导体学报(英文版), 2000, 21(5): 417-420.

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