Chin. J. Semicond. > 1995, Volume 16 > Issue 3 > 167-169
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在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究

蒋四南，林兰英

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(3): 167-169
      蒋四南，林兰英. 在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究[J]. 半导体学报(英文版), 1995, 16(3): 167-169.
      Citation:
      蒋四南，林兰英. 在微重力下生长的GaAs：Si单晶结构缺陷的X射线研究[J]. 半导体学报(英文版), 1995, 16(3): 167-169.
      shu

      • Received Date: 2015-08-19

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