Citation: |
Feng Ming, Huang Qing’an, Li Weihua, Zhou Zaifa, Zhu Zhen. Simulation of SU-8 Photoresist Profile in Deep UV Lithography[J]. Journal of Semiconductors, 2007, 28(9): 1465-1470.
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Feng M, Huang Q, Li W H, Zhou Z F, Zhu Z. Simulation of SU-8 Photoresist Profile in Deep UV Lithography[J]. Chin. J. Semicond., 2007, 28(9): 1465.
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Simulation of SU-8 Photoresist Profile in Deep UV Lithography
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Abstract
A new simulation method is proposed which considers diffraction,reflection,refraction,energy loss,absorption coefficient change,post-bake,and development.Compared with previous simulation methods,the present results show good agreement with experimental results.This shows that the simulation accuracy is increased.It is useful for the research of SU-8 phoptoresist deep UV lithography processes and micro-electro-mechanical system design. -
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