
Abstract: Based on the analysis to the traditional parallel-plate capacitor We present a novel MEMS tunable capacitor with a wide tuning range. Different from the conventional parallel-plate capacitors this capacitor consists of three pairs of plates. One pair of them is used as capacitor plates and the other two are used as controlling plates. AC signal passes through the capacitor plates while DC controlling voltage is applied between the controlling plates. By simulation with Ansys softWare We get the tuning range is up to 214% largely beyond the theoretical tuning range limit ( 50% D of conventional two-parallel-plate capacitors. It can be easily integrated in RF circuits for this simple process of fabrication.
Key words: MEMS voltage-controlled capacitor
1 |
A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensation Han Wang, Lin Tan Journal of Semiconductors, 2016, 37(2): 025005. doi: 10.1088/1674-4926/37/2/025005 |
2 |
Shibir Basak, Pranav Kumar Asthana, Yogesh Goswami, Bahniman Ghosh Journal of Semiconductors, 2014, 35(11): 114001. doi: 10.1088/1674-4926/35/11/114001 |
3 |
VCCS controlled LDO with small on-chip capacitor Qiuli Li, Yao Qian, Danzhu Lü, Zhiliang Hong Journal of Semiconductors, 2014, 35(11): 115011. doi: 10.1088/1674-4926/35/11/115011 |
4 |
A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders Jinpeng Shen, Xin'an Wang, Shan Liu, Shoucheng Li, Zhengkun Ruan, et al. Journal of Semiconductors, 2013, 34(10): 105004. doi: 10.1088/1674-4926/34/10/105004 |
5 |
MOS Capacitance–Voltage Characteristics: IV. Trapping Capacitance from 3-Charge-State Impurities Jie Binbin, Sah Chihtang Journal of Semiconductors, 2012, 33(1): 011001. doi: 10.1088/1674-4926/33/1/011001 |
6 |
MOS Capacitance-Voltage Characteristics: V. Methods to Enhance the Trapping Capacitance Jie Binbin, Sah Chihtang Journal of Semiconductors, 2012, 33(2): 021001. doi: 10.1088/1674-4926/33/2/021001 |
7 |
Capacitance-voltage analysis of a high-k dielectric on silicon Davinder Rathee, Sandeep K. Arya, Mukesh Kumar Journal of Semiconductors, 2012, 33(2): 022001. doi: 10.1088/1674-4926/33/2/022001 |
8 |
Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001 |
9 |
A review of passive thermal management of LED module Ye Huaiyu, Sau Koh, Henk van Zeijl, A. W. J. Gielen, Zhang Guoqi, et al. Journal of Semiconductors, 2011, 32(1): 014008. doi: 10.1088/1674-4926/32/1/014008 |
10 |
MOS Capacitance–Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(4): 041001. doi: 10.1088/1674-4926/32/4/041001 |
11 |
A novel complementary N+-charge island SOI high voltage device Wu Lijuan, Hu Shengdong, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2010, 31(11): 114010. doi: 10.1088/1674-4926/31/11/114010 |
12 |
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, et al. Journal of Semiconductors, 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002 |
13 |
Erase voltage impact on 0.18 μm triple self-aligned split-gate flash memory endurance Dong Yaoqi, Kong Weiran, Nhan Do, Wang Shiuh-Luen, Lee Gabriel, et al. Journal of Semiconductors, 2010, 31(6): 064012. doi: 10.1088/1674-4926/31/6/064012 |
14 |
A low-power and low-phase-noise LC digitally controlled oscillator featuring a novel capacitor bank Tian Huanhuan, Li Zhiqiang, Chen Pufeng, Wu Rufei, Zhang Haiying, et al. Journal of Semiconductors, 2010, 31(12): 125003. doi: 10.1088/1674-4926/31/12/125003 |
15 |
Capacitance–voltage characterization of fully silicided gated MOS capacitor Wang Baomin, Ru Guoping, Jiang Yulong, Qu Xinping, Li Bingzong, et al. Journal of Semiconductors, 2009, 30(3): 034002. doi: 10.1088/1674-4926/30/3/034002 |
16 |
Analysis of Pull-In Voltage of RF MEMS Switches Dong Qiaohua, Liao Xiaoping, Huang Qing’an, Huang Jianqiu Journal of Semiconductors, 2008, 29(1): 163-167. |
17 |
Li Li, Zhao Zhengping, Zhang Zhiguo, Guo Wensheng, Lü Miao, et al. Chinese Journal of Semiconductors , 2006, 27(5): 900-904. |
18 |
Tang Lu, Wang Zhigong, Huang Ting, Li Zhiqun Chinese Journal of Semiconductors , 2006, 27(3): 459-466. |
19 |
Tang Zhangwen, He Jie, Min Hao Chinese Journal of Semiconductors , 2005, 26(11): 2182-2190. |
20 |
An Accurate 1.08GHz CMOS LC Voltage-Controlled Oscillator Chinese Journal of Semiconductors , 2005, 26(5): 867-872. |
Article views: 1871 Times PDF downloads: 608 Times Cited by: 0 Times
Received: 16 March 2016 Revised: Online: Published: 01 January 2003
Citation: |
Liang Xuedong, Liu Zewen, Liu Litian, Li Zhijian. Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor[J]. Journal of Semiconductors, 2003, 24(S1): 179-182.
****
Liang X D, Liu Z W, Liu L T, Li Z J. Design and simulation ofa high-Tuning-Range RF MEMs Voltage-Controlled Capacitor[J]. Chin. J. Semicond., 2003, 24(S1): 179.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2