Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 200-205
|

CONTENTS

SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响

徐静平 , 吴海平 , 黎沛涛 and 韩弼

+ Author Affiliations

PDF

Key words: SiC, n-MOSFET, SiO2/SiC界面, 迁移率

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2555 Times PDF downloads: 1371 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 200-205
      徐静平, 吴海平, 黎沛涛, 韩弼. SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响[J]. 半导体学报(英文版), 2004, 25(2): 200-205.
      Citation:
      徐静平, 吴海平, 黎沛涛, 韩弼. SiO_2/SiC界面对4H-SiC n-MOSFET反型沟道电子迁移率的影响[J]. 半导体学报(英文版), 2004, 25(2): 200-205.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return