Chin. J. Semicond. > 1981, Volume 2 > Issue 4 > 298-306
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用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命

马鑫荣 , 田立林 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(4): 298-306
      马鑫荣, 田立林, 李志坚. 用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命[J]. 半导体学报(英文版), 1981, 2(4): 298-306.
      Citation:
      马鑫荣, 田立林, 李志坚. 用MIS结构C(t)特性同时决定半导体表面层内及体内的少子寿命[J]. 半导体学报(英文版), 1981, 2(4): 298-306.
      shu

      • Received Date: 2015-08-20

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