Chin. J. Semicond. > 1985, Volume 6 > Issue 6 > 584-589
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高剂量低能氧离子注入硅形成SiO_2薄膜的研究

王勇 , 李维中 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(6): 584-589
      王勇, 李维中, 李志坚. 高剂量低能氧离子注入硅形成SiO_2薄膜的研究[J]. 半导体学报(英文版), 1985, 6(6): 584-589.
      Citation:
      王勇, 李维中, 李志坚. 高剂量低能氧离子注入硅形成SiO_2薄膜的研究[J]. 半导体学报(英文版), 1985, 6(6): 584-589.
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      • Received Date: 2015-08-20

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