| Citation: |
Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films[J]. Journal of Semiconductors, 2006, 27(2): 345-349.
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Guo H Q, Lin S X, Wang Q M. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films[J]. Chin. J. Semicond., 2006, 27(2): 345.
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Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films
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Abstract
nc-Si-SiO2 films are prepared by RF magnetron sputtering technique and thermal annealing.The photoluminescence (PL) spectra at room temperature have 3 luminescent band peaks at 360,430,and 835nm,respectively.The PL mechanism is discussed in combination with absorption measurement,PL excitation,and X-ray diffraction.Passive Q-switched operation of Nd∶YAG lasers is demonstrated with a nc-Si-SiO2 film as a saturable absorber. -
References
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