PAPERS
Abstract: A novel REBULF (reduced bulk field) concept is proposed for the development of a smart power integrated circuit with a thin epitaxy layer,and a new REBULF LDMOS device structure is designed with an n+-floating layer embedded in the high-resistance substrate.The mechanism of the improved breakdown characteristics is that a high electric field around the drain is reduced by a n+-floating layer,which causes the redistribution of the bulk electric field in the drift region,and the substrate supports more biases.The critical condition of the REBULF,which is analyzed and validated by a 2D MEDICI simulator,is that the product of the location of the n+-floating layer and the substrate doping cannot exceed 1E12cm-2. The breakdown voltage of the REBULF LDMOS is 75% greater than that of a RESURF LDMOS.
Key words: LDMOS, bulk electric field, n+-floating layer, breakdown voltage
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Received: 20 August 2015 Revised: Online: Published: 01 April 2006
| Citation: |
Zhang Bo, Duan Baoxing, Li Zhaoji. Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer[J]. Journal of Semiconductors, 2006, 27(4): 730-734.
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Zhang B, Duan B X, Li Z J. Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer[J]. Chin. J. Semicond., 2006, 27(4): 730.
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