| Citation: |
Shu Bin, Zhang Heming, Wang Qing, Huang Dapeng, Xuan Rongxi. Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J]. Journal of Semiconductors, 2007, 28(9): 1406-1410.
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Shu B, Zhang H M, Wang Q, Huang D P, Xuan R X. Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J]. Chin. J. Semicond., 2007, 28(9): 1406.
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Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure
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Abstract
Bi2O3-ZnO-Nb2O5 (BZN) film with a high dielectric constant,which can be used as a gate medium in GaN metal-insulator-semiconductor field effect transistors (MISFETs),was fabricated by the sol-gel technique.Process parameters such as raw material proportioning,sinter temperature,and heat preservation time were obtained.The problems of the dissolvability,viscosity,and soakage of the raw material were also solved.A GaN MIS structure with the BZN film was also fabricated;and from the measured C-Vcurve,εr of the BZN film was 91,and the reverse voltage and CFB of this MIS structure were -3.4 and -1.9V,respectively.-
Keywords:
- sol-gel,
- BZN film,
- MIS structure,
- C-V curve
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References
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Proportional views
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