Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1390-1395
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超深亚微米LDD nMOSFET中的非幸运电子模型效应

杨林安 , 于春利 and 郝跃

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Key words: LDD nMOSFET, 热载流子退化, 沟道热载流子应力, 漏雪崩热载流子应力, 幸运电子模型

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1390-1395
      杨林安, 于春利, 郝跃. 超深亚微米LDD nMOSFET中的非幸运电子模型效应[J]. 半导体学报(英文版), 2005, 26(7): 1390-1395.
      Citation:
      杨林安, 于春利, 郝跃. 超深亚微米LDD nMOSFET中的非幸运电子模型效应[J]. 半导体学报(英文版), 2005, 26(7): 1390-1395.
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      • Received Date: 2015-08-18

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