| Citation: |
Chen Zhigang, Zhang Yang, Luo Weijun, Zhang Renping, Yang Fuhua, Wang Xiaoliang, Li Jinmin. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. Journal of Semiconductors, 2008, 29(9): 1654-1656.
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Chen Z G, Zhang Y, Luo W J, Zhang R P, Yang F H, Wang X L, Li J M. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. J. Semicond., 2008, 29(9): 1654.
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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
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Abstract
We propose and fabricate an AlGaN/GaN high electron mobility transistor (HEMT) on sapphire substrate using a new kind of electron beam (EB) lithography layout for the T-gate.Using this new layout,we can change the aspect ratio (ratio of top gate dimension to gate length) and modify the shape of the T-gate freely.Therefore,we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency (fT) of 65GHz.The aspect ratio of the T-gate is 10.These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm. -
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